Solid state electronics (IV)-analysis of the formation process of "holes" and free electrons

When P is incorporated into silicon, P only needs to absorb a small amount of energy, and the outermost electrons in the nucleus can break away from the bound nucleus to form a free electron, and semiconductors start to conduct electricity. This semiconductor is N Type

 

When boron B is added to silicon, the silicon only needs to absorb a small amount of energy, and the outer electrons of the silicon will fill the surrounding "bonded space" to form a hole.

The surrounding electrons fill the holes again. This reciprocating will cause the holes to move. This semiconductor is of the p type.

Because the outermost layer of B has only three electrons, it can only form a crossbond with the three electrons of Silicon. The fourth electron of silicon cannot form a crossbond, this is called a "crossbond vacancy ".

The Conductive Mechanisms of n-type semiconductors and p-type semiconductors are actually different.

N-type semiconductors are caused by the excitation of a large number of free electrons to participate in conductive

P-type semiconductors are conductive due to the fact that electrons are constantly filled with holes, resulting in the movement of holes. The essence is still electronic conductive. Because its essence is electronic movement, holes are artificial concepts.

Solid state electronics (IV)-analysis of the formation process of "holes" and free electrons