Intel announces 3D Triple Gate transistor design

April 23, 2012, Intel announced the 3D three gate transistor design, the minimum line width of 22 nm Ivy Bridge microprocessor production success, and on April 29 to start global sales.

According to the information published, the series CPU has 1.4 billion transistors, chip area of only 25 mm x25 mm, due to the first use of 3D three-grid-level transistor technology, so that the chip can operate at a lower voltage, and further reduce the transistor leakage current, and the previous 32 nm 2D transistor CPU compared , the switching speed is increased by 37% in the low voltage operating mode, the power consumption is reduced by 50%, and the power consumption of the same CPU is reduced by 19% compared with the 22 nanometer plane transistor.

This is indeed a new big-span technological advance that marks Intel as the world leader in semiconductor manufacturing technology. It has been nearly a year since May 4, 2011, when Intel officially announced that it would use the 3D triple-gate transistor design technology to carry out the Ivy Bridge microprocessor production plan.

Why "3D" before adding "Triple Gate Class (Tri-gate)" Transistor this title? This is the key to this process improvement. Compared with the previous work mode of planar transistor model structure, this transformation is mainly embodied in the "1" planar "grid" of the bottom area only, and developed into "3" plane shape "gate" of the stereo structure. The control current simultaneously controls the transistor's source and drain currents from the grid 3 faces (both sides and top) of the cube shape, so it is called a "three gate" transistor. Such a "Three gate" structure shaped like a book, originally "lay on the flat", now become "stand up to put". Compared with the previously flat "1" gate transistors, it saves the chip area, reduces the leakage current of the transistor and improves the switching speed. Thus the CPU performance is greatly improved, the power consumption is reduced and the integration of the unit area is improved.

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