ddr for ps4

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Sony xperia Z3 with elegant design and exquisite craftsmanship

phones and other devices. Share. For example, your mobile phone can connect your mobile phone to another Sony, or connect to the TV through miracast, or connect to the car audio through the audio link. A unique feature is to connect Z3 to PS4/3 through OTG and Bluetooth, so that the control controllers of PS4 can be on mobile phones. There are many games that you can run up through the controllers, I sudde

Learning bash notes-debugging shell programs and learning bash shell

/bashtest /Home/yanwenjie/bashtest The-x option returns the command line result after parameter replacement, command replacement, and other command line processing steps. The x option prints + at the beginning of each line (but I don't know why I printed two). This can be customized. It is the value of the built-in shell variable PS4. You can modify this symbol by modifying the PS4 value. For example, the c

Xbox 720 compatible part WIN8 application

April 25 News, Microsoft officially announced on May 21, the next generation of Xbox game Host Conference. Although there are still one months to see its ticket, but based on the previous channels of coverage, we have been able to roughly describe the outline of the mainframe. Below we will summarize this by Netizen called "The Xbox 720" The game machine the general situation. Next generation Xbox Conference held May 21 Hardware: Changed to X86 platform processor, AMD production I

Shell Getting Started Tutorial (7)-Scripting

are equal 5, Control command case perform multiple branch detection, such as: Case is in A) echo "a";; b) echo "B";; * echo "other";; Esac for command execution loop For I in 1 2 3 Todo Echo $i Done Alternatively, the loop variable is then taken from all positional arguments in turn For I Todo Echo $i Done Or For ((i=1;i Todo Echo $i Done if, such as: A=7 if ((a>10)); then echo "A>10" Elif ((a>5)); then echo "A>5" Else echo "A Fi while, such as: A=1 while ((A Todo Echo $a ((a++)) Done until, su

IC Power Management Unit

WFI instruction , this instruction will let arm perform the necessary operation to enter the standby mode safely, once arm enters standby mode, the STANDBYWFI mark will be placed Armcfgr bit1 D, close ARM clock, hardware tag arm_sleep will be set ARMCFGR bit2 E, when the wake-up interrupt arrives, the arm_sleep tag will be cleared, the arm clock will open, and then arm exits standby mode into run mode Baseband Sleep , the Stach processor and PHY processor will go to sleep independently, and the

Rookie learn the second diagram of installed memory installation

After installing the CPU, the next step is to start installing the memory strips. Before installing the memory strips, you can check the motherboard specification for the type of memory that the motherboard can support, the slot data that can be installed on the memory, the maximum supported capacity, and so on. Although these are simple, do you know how different memory strips are differentiated? Do you know why EDO RAM memory must be in pairs to be used? Do you know why the free location of th

Uboot Study of Seven---uboot environment variables

card in the environment variable partition, in the Uboot raw partition. The SD card is actually given a partition, dedicated to storage. In fact, the environment variables in the DDR are written to the SD card partition in the whole memory. So when we saveenv, the whole environment variable is saved once, not just the changes.(3) The environment variable in DDR, in Default_environment, is essentially an ar

RPM: OK6410 memory and start-up process

One, memoryOnly from the general introduction, and does not involve the operation of registers6410 of system resources are: 256MB DDR, 2GB NandflashAs shown in the following:ROM is read-only memory, RAM is random memory.Difference:1.ROM (Read only Memory) power-down data is not lost, but the storage read speed is slow, so commonly used as a storage program, storage bootloader, storage kernel, storage file system.2.RAM (Random Access memory) lost power

Vpfe register description

Vpfe 1. Overview 1.1 CCDC 1) generation of SD and HD time series signals 2) lens shading correction ). 3) supports bt656, ycbcr422 (8bit, 16bit, with HS, VS), and 14bit raw data from CCD/CMOS. 4) programmable 14bit to 8bit output 5) data can be written to DDR through the external write active signal en control 6) The sensor CLK can reach 75 MHz. If H3A is used, it can only reach 67.5 MHz. 7) defect correct 1.2.h3a 1) Auto White Balance and auto eexpos

Instructions for installing and upgrading hi3531 SDK

MPP/ko_hi3531 directory and load KoCd mpp/ko_hi3531./Load3531_asic-I# Enter the sample directory and execute the corresponding sample program (the sample must be compiled on the server first)Cd mpp/sample/Vio./Sample_vio 0Chapter 6 address space allocation and use1. DDR memory management description1) one part of all DDR memory is managed by the operating system, which is called the OS memory; the other pa

Assembly Write startup code 413

hard disk/flash, the runtime reads into the DDR, then reads the register from the DDR, and then the register is sent to the CPU. But the speed of the DDR and register (represents the CPU) is too large, if the CPU runs out of a sentence and then go to the DDR read the next sentence, then the CPU speed is completely

Detailed analysis of MMU setting process in ce5.0-eboot Assembly startup. s

Source: http://blog.csdn.net/embeddedfly/article/details/6150452 Detailed analysis of MMU setting process in ce5.0-eboot Assembly startup. s The following is the startup code of the smdk Development Board startup. S.;------------------------------------------------------------------------------- Memorymap equ 0x2a4Bank_size equ 0x00100000; 1 MB per bank in memorymap ArrayBank_shift equ 20 ; Define Ram space for the page tables:;Phybase equ 0x30000000; physical startPTS equ 0x30010000; 1st leve

The difference between SRAM and SDRAM

Http://www.cnblogs.com/spartan/archive/2011/05/06/2038747.htmlSdramSDRAM (Synchronous dynamic random access memory), synchronous, refers to the memory work requires a step clock , The transmission of internal commands and the transfer of data are based on it, dynamic refers to the storage array needs to be constantly refreshed to ensure that the data is not lost, random refers to the data is not linear storage , but by the specified address to read and write data. The current 168-wire 64bit band

Debugging techniques built into bash scripts _linux shell

Scripts written in Bash can also be debugged, just like Python,perl and other interpreted languages. Create a new script named Servinfo and add executable permissions: Copy Code code as follows: $ VI Servinfo #!/bin/bash echo "Hostname: $ (Hostname)"echo "Date: $ (date)"echo "Kernel: $ (Uname-mrs)" $ chmod +x Servinfo With Bash-x to debug the above script, bash prints each line of script first, then prints out the results of each line of script: Copy Code c

"Turn" RAM Daquan-dram, SRAM, SDRAM relations and differences

, specific reference to the manufacturer design specifications. There are many types of dram, common mainly fpram/fastpage, Edoram, SDRAM, DDR RAM, RDRAM, Sgram, and Wram, which are described in one of the DDR RAM. DDR RAM (Date-rate RAM) is also known as DDR SDRAM, which is basically the same as the improved RAM and S

intel® Xeon Phi? Processor Optimization Tutorials

Users need to use numactl or modify the code Cache mode is transparent to the user Extended Cache Level Latency may increase when loading/saving memory in DDR 4 Mixed mode Applications can take full advantage of flat mode and cache mode Disadvantages of flat mode and cache mode

w-d-s-Link Address

1, the program is burned to write to Nandflash, set to Nandflash start, 6410 tablets have 8 K of memory, set to Nandflash start, is from the on-chip memory 0 address start, a power, Nandflash Front 8K content will be copied to the 6410 front of the memory 8k address, and then start from 0 address, if the burn to Nandflash above the program above 8k, do not do other processing will not be able to run.So to initialize the DDR, the entire Nandflash insid

The difference between SRAM and SDRAM

SdramSDRAM (Synchronous dynamic random access memory) is synchronous, which means that the memory work requires a step clock, the internal command is sent and the data is transmitted as a benchmark Dynamic means that the storage array needs constant refresh to ensure that data is not lost, and stochastic means that the data is not stored linearly, but the data is read and written by the specified address. The current 168-wire 64bit bandwidth memory basically uses SDRAM chip, operating voltage 3.

(4) DRAM Sizing

of dram chip. 5. the common DRAM is DDR/DDR2 SDRAM. the so-called "S" Dram refers to synchronous DRAM, that is, DRAM operation is performed by referring to a clock, that is, synchronous ). DDR refers to double data rate, that is, data can be transmitted in the rising and falling edge of clock. DDR2 refers to the "second generation" of DDR "! (Do not think of i

I/O characteristics

pins supportVarious single-ended and differential I/O standards, such as the 66-and33-mhz, 64-and 32-bit PCI Standard, Pci-x, and the LVDS I/o StandardAt a maximum data rate of 805 Megabitsper second (Mbps) for inputs and640 Mbps for outputs. Each IOE contains a bidirectional I/O buffer andThree registers for registering input,output, and output-enable signals.Dual-Purpose DQS, DQ, and DM pins along with delay chains (used tophase-align double data rate (DD

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