Discover the difference between Schottky diodes and Zener diodes

With the continuous progress of the society, electronic components have been closely related to people's lives, in electronic components, the most common is the regulator diode and Schottky diode , in various industry areas are widely used. But at work, buyers often meet customers who are not clear about Zener diodes and Schottky diodes, and perhaps they are just purchasing products, not engineering, so it's not surprising that they don't know the product. Remind the procurement of friends, do not understand the product is easy to buy the wrong product, resulting in other problems in the work.

The general diode is a positive guide, the reverse cutoff; the reverse voltage on the diode if it exceeds the capacity of the diode, the diode will penetrate and damage. The voltage regulator diode is a phenomenon that uses the PN junction reverse breakdown state, the current can change in a large range and the voltages are basically unchanged. At the breakdown point, the reverse resistance is reduced to a very small value, the current in this low-resistivity region increases while the voltage remains constant, the regulator diode is divided according to the breakdown voltage, because of this characteristic, the regulator is mainly used as a voltage regulator or reference element.

　　Schottky Diode is a low-power, high-current, ultra-high-speed semiconductor devices, its specialty is the switch speed is very fast, reverse recovery time can be as small as a few nanoseconds, the guide through pressure drop only about 0.4V, and rectifier current can reach thousands of amps. So suitable for low-voltage, high-current conditions to work, the computer host power output rectifier diode is the use of Schottky diodes.

　　Schottky Diode is an n-type semiconductor substrate, on which the formation of arsenic as a dye additive n-epitaxial layer. Positive (barrier layer) metal material is molybdenum,. Silicon dioxide is used to eliminate the electric field in the edge area and increase the voltage resistance of the Schottky diode. N-type substrate doping concentration is 100 times times higher than n one, and has a very small on-state resistance. The n+ cathode layer at the lower part of the substrate is used to reduce the contact resistance of the cathode. By adjusting the structural parameters, a suitable Schottky diode can be formed between the substrate and the anode metal.

Discover the difference between Schottky diodes and Zener diodes