Samsung NAND Flash ID spec

Samsung has also invested a lot of energy in the storage of NAND Flash. It has deep development for pure NAND Flash, onenand (NAND Flash module with controller), and NAND drivers. The NAND mentioned later will be based on Samsung products, including drivers.
The naming rules for Samsung pure NAND Flash (that is, the NAND flash storage chip without other modules) are as follows:

1. Memory (k)
2. nand flash: 9
3. Small Classification
(SLC: single level cell, MLC: multi level cell,
SM: smartmedia, S/B: small block)
1: SLC 1 Chip XD card
2: SLC 2 Chip XD card
4: SLC 4 Chip XD card
A: SLC + muxed I/F Chip
B: muxed I/F Chip
D: SLC dual Sm
E: SLC dual (S/B)
F: SLC normal
G: MLC normal
H: MLC qdp
J: Non-muxed one Nand
K: SLC die Stack
L: MLC DDP
M: MLC DSP
N: SLC DSP
Q: 4 Chip Sm
R: SLC 4die stack (S/B)
S: SLC single Sm
T: SLC single (S/B)
U: 2 stack MSP
V: 4 stack MSP
W: SLC 4 die Stack
4 ~ 5. Density
12: 512 M 16: 16 m 28: 128 m
32: 32 M 40: 4 m 56: 256 m
64: 64 m 80: 8 M 1G: 1g
2G: 2G 4G: 4G 8G: 8g
AG: 16g BG: 32g cg: 64g
DG: 128g 00: None
6 ~ 7. Organization
00: None 08: X8
16: x16
8. VCC
A: 1.65v ~ 3.6 v B: 2.7 V (2.5v ~ 2.9 V)
C: 5.0 V (4.5v ~ 5.5 V) D: 2.65 V (2.4 V ~ 2.9 V)
E: 2.3v ~ 3.6 v r: 1.8 V (1.65v ~ 1.95 V)
Q: 1.8 V (1.7 V ~ 1.95 v) T: 2.4v ~ 3.0 V
U: 2.7v ~ 3.6 V: 3.3 V (3.0v ~ 3.6 V)
W: 2.7v ~ 5.5 V, 3.0v ~ 5.5 V 0: None
9. Mode
0: normal
1: Dual nce & dual R/Nb
4: quad nce & single R/Nb
5: quad nce & quad R/Nb
9: 1st block OTP
A: Mask Option 1
L: Low Grade
10. Generation
M: 1st generation
A: 2nd generation
B: 3rd Generation
C: 4th generation
D: 5th Generation
11"
12. Package
A: cob B: tbga
C: Chip biz D: 63-tbga
E: tsop1 (lead-free, 1217)
F: wsop (lead-free) G: fbga
H: tbga (lead-free)
I: Ulga (lead-free) J: fbga (lead-free)
K: tsop1 (1217) L: LGA
M: tlga N: tlga2
P: tsop1 (lead-free)
Q: tsop2 (lead-free)
R: TSOP2-R S: Smart Media
T: tsop2 U: COB (MMC)
V: wsop W: Wafer
Y: tsop1
13. Temp
C: commercial I: Industrial
S: smartmedia
B: smartmedia blue
0: none (containing wafer, Chip, biz, exception
Handling Code)
3: Wafer Level 3
14. Bad Block
A: Apple Bad Block
B: include bad block
D: daisychain sample
K: SanDisk Bin
L: 1 ~ 5 Bad Block
N: ini. 0 BLK, Add. 10 BLK
S: All Good block
0: none (containing wafer, Chip, biz, exception
Handling Code)
15. NAND-Reserved
0: Reserved
16. Packing type
-Common to all products, memory T of mask Rom
-Divided into tape & reel (in mask Rom, divided into tray, ammo packing separately)

17 ~ 18. Customer "customer list reference"