DDR3 is a computer memory specification. It belongs to the SDRAM family of memory products, providing a higher operating performance compared to DDR2 SDRAM and lower voltage.
Introduction to DDR3 Technology
DDR3 SDRAM in order to save power, faster transmission efficiency, the use of SSTL 15 I/O interface, operating I/O voltage is 1.5V, the use of CSP, FBGA package packaging, in addition to the continuation of DDR2 SDRAM ODT, OCD, Posted CAS, Al control methods, In addition to the new more sophisticated CWD, Reset, ZQ, SRT, RASR functions.
Technical improvement of DDR3 memory
Logical Bank Number: The DDR2 SDRAM has 4Bank and 8Bank designs designed to meet future demand for large-capacity chips. And DDR3 is likely to start with 2Gb capacity, so the starting logical Bank is 8 and is ready for the next 16 logical bank.
Package: DDR3 As a result of a number of new features, so the pin will be increased, 8bit chip using 78-ball FBGA package, 16bit chip using 96-ball FBGA package, and DDR2 60/68/84 Ball FBGA Package three specifications.
Burst length: Because of the DDR3 8bit, the burst transmission cycle (Bl,burst Length) is also fixed to 8, and for DDR2 and early DDR architecture of the system, bl=4 is also commonly used, DDR3 to this increase 4-bit Burst (sudden mutation mode, that is, a bl=4 read operation combined with a bl=4 write operation to synthesize a bl=8 data burst transmission, then the A12 address line to control this burst mode.
Addressing timing: The delay between the DDR3 is between 5 and 11, and the design of the additional delay (AL) changes.
Reduce power consumption: DDR3 in the presence of high bandwidth at the same time, its power consumption can be reduced, its core operating voltage from DDR2 1.8V to 1.5V, the relevant data forecast DDR3 will save 30% than the current DDR2 power consumption.