Deep analysis IPhone6 plus recall rumors

A recent: 128G of Iphone6/plus will be inexplicable collapse, fear of leading to large-scale recalls. News has gone crazy on the internet, and it has caused a lot of concern among Apple users, especially those who chose the 128G iphone on the basis of buying and buying top. But news content has aroused the author's curiosity, according to the report: the cause of the iphone crash is the NAND flashmemory (Flash) module in the IC Control unit failure, and Apple to reduce the cost of using a low-cost NAND TLC FLASH MEMORY rather than more expensive, faster NAND MLC FLASH MEMORY. So when a user installs more than 700 apps, the iphone crashes itself, and what worries consumers is that the issue is not resolved in the latest iOS8.1 update, and the problem is on the hardware. What exactly is NAND tlc/mlc FLASH memory? First flash memory, as a flash device, is an important storage medium for mobile devices, which was invented by Toshiba Corporation in Japan in 1984. In flash memory is divided into nor flash and NAND flash two common types, of which nor Flash belongs to the first generation of products, the first commercial products are 1988 Intel manufacturing of Nor Flash chip, but because of the long time to erase, The reason for the high cost, NOR Flash was quickly replaced by NAND flash. NAND Flash was also invented by Toshiba, published in the 1988 International Solid State Circuit Symposium (ISSCC). NAND Flash has a faster time to erase and a smaller area per storage unit, which gives NAND flash a higher storage density and lower per-bit cost than nor flash. At the same time, it can be erased more than nor Flash 10 times times. In the FLASH module, the data is stored in an array of memory cells consisting of a floating gate transistor, and in the Tan Jie storage unit (single-level cell, SLC) device, each unit stores only 1 bits of information, which is referred to as SLC NAND FLASH, with the advantage of faster transfer speed, Power consumption is lower and storage unit life is longer, but the disadvantage is also obvious: each storage unit contains less information, each million bytes cost more to produce, so it is not conducive to actual production. and the multi-order storage unit (multi-level cell, MLC) equipment uses a variety of charge value control so that each unit can store more than 2 bits of data, its multi-level refers to the charge charge has multiple energy levels (that is, multiple voltage values), so that can store multiple bits of value in each storage unit. You can store more bits per storage unit, MLCFlash can reduce production costs, but it is slower to transmit than SLC Flash, has a higher power consumption and has a lower lifetime of storage units, so MLC Flash technology is used in standard storage cards. This time, the third-order storage unit (Triple-level cell, TLC), which was heavily criticized by the Korean media, has the same architectural principle as MLC, but can store 3 bits of information in each storage unit. The writing speed of TLC is slower than that of SLC and MLC, and the life expectancy is shorter than that of SLC and MLC, about 1000 times, but it can achieve large capacity and low price. Now, instead of using the name TLC, the manufacturer calls it 3-bit MLC. What exactly did the iphone use? FLASH Memory in South Korean media reports that the iphone not only uses a lower-cost NAND TLC FLASH, but more importantly fails in its control IC (IC). Inside the iphone, this IC is the main task of other electronic components and NAND between the scheduling and control, to ensure that the data is normal to write and read, at ordinary times the user whether the camera or use applications are inseparable from it. So is the actual situation as reported in the Korean media? With curiosity, the author consulted the ifixit of the demolition machine. According to 128G real-machine real-Skhynix, it uses NAND FLASH from the South Korean sea-Rexroth, the model is H2jtdg8ud1bms. (The red part of the picture) this NAND flash is classified as E2nand 3.0 in the technical documentation of the company, and is developed by SK Hynix and Anobit, and Anobit has long been acquired by Apple and is committed to improving the stability of flash memory. Although the H2jtdg8ud1bms is not clearly labeled, the H2JTDG8UD1BMS is clearly defined as NAND MLC FLASH MEMORY on the world's leading microelectronics service website Techinsights. So the Korean media is untrue, the IPhone 6 Plus is using NAND MLC flash MEMORY, rather than the so-called cheap NAND TLC flash MEMORY. As for this flash in the control IC whether there is a problem, the current Apple did not come forward to explain, in other media also did not see the reflection, so need further confirmation. While the technical details of the iphone 6 Plus have been cleared up behind the news, why is such an untrue news? The author proceeded to the investigation. This news first appeared in the Korean media businesskorea, the strange thing is businesskorea the content all comes from the Apple forum the same user, he in the total 159 article discussion posts all reflected the 128G IPhone 6 Plus automaticCrash problem. Obviously, there are obvious deficiencies in the process of businesskorea, the news facts are obviously insufficient, the evidence is single and the persuasion is low. In addition, there is no identification of the iphone 6 Plus real components, easy to draw the 128G iphone 6 Plus the use of NAND TLC FLASH memory error conclusions. Although Apple officials have stated that there is no 128G iPhone 6 Plus large-scale automatic collapse, but not a large-scale recall, but this false news to many Apple users still have a big impact. In the author's actual use process, the IPhone 6 does have a program crash phenomenon, but the number is very rare, more for the jailbreak after the conflict caused by Plug-ins, and in daily life and the media is never seen too high frequency collapse phenomenon, so you 128G tyrants users can be assured, but the media long snack bar! Do not blindly the eyeball and irresponsible reprint.