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Intel 3D three gate Transistor design won the annual Science and Technology Innovation Award

Sina Science and technology news on the morning of October 21, the Wall Street Journal recently announced the 2011 "Science and Technology Innovation Award", Intel three gate transistor design won the Semiconductor Category Innovation Awards. The Intel three-dimensional gate transistor structure represents a fundamental shift from the D planar transistor structure.  The key to this revolutionary outcome is the ability of Intel to put the new three-, triple-gate transistor design into mass production, usher in another new era in Moore's Law, and open the door for next-generation innovations in various types of devices. The Wall Street Journal in 2011 ...

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