Script virus: Trojan. DL. vbs. agent. | JS) It always appears in temporary files on the Internet. Rising monitoring has been killing and repeating this! I tried to clear the temporary files, but when I open the web page (no matter which web pages)
Message code messageg.5
==> There shocould only be definitions in the top include (or
Nested events des within it). This means that all kinds
Implementation (class... implementation, not meaningful. Is
Not meaningful.
Assuming that
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Nandflash driver porting series Article Navigation:
Nandflash driver porting (1)
Nandflash driver porting (2)
Nandflash driver porting (III)
Nandflash driver porting (4)
Nandflash driver porting (5)
Nandflash driver porting (6)
Six in total
Here we will introduce the nfcon and nandflash control registers in the cloud6410cpu.
8.1 OverviewRecently nor Flash Memory price has increased and PR ice for SDRAM and a nand flash memory is moderatly placed.The 6410 is equipped with an internal SRAM buf
, compared to SLC, the price of general, capacity can be larger, the general speed, life expectancy (about 10,000 times erase). TLC, which stores 3bit of data for 3bit/cell, 1 storage units, has the lowest cost and the largest capacity compared to the same capacity, but with the slowest speed and shortest life (about 1000 erase writes). Currently on the market based on NAND flash memory, such as SD card, U disk and so on are mostly MLC type, but for high-capacity NAND memory, such as SD card 64G
Server memory is also memory (RAM), it and ordinary PC (PC) machine There is no obvious difference in appearance and structure, mainly in the memory of the introduction of some new unique technologies, such as ECC, Chipkill, hot plug technology, with high stability and error correction performance.
Server memory Main technology:
(1) Ecc
In normal memory, a technique that is often used, i.e. Parity,
should also be an address, but in fact it is.
Increment by erase_block (Block), move to the last page of the current block each time, calculate the number of the page as the page number, and then change the column address to pagesize, in sequence, read the CMD, page, and column in the address is transmitted to NAND Flash, and then the value of this address can be read from the 6410 NAND Flash data address register.
Check whether the hardware is correct, such as the address line.
Note that if y
half, and OOB respectively, and use the built-in pointer of NAND Flash to point to the respective first address.
Storage operations have the following features: The minimum unit for erasure operations is block. each bit of the NAND flash chip can only change from 1 to 0, but not from 0 to 1, therefore, you must erase the corresponding block before writing the block (the bit of the corresponding block is changed to 1); the OOB part is 6th bytes (that is, 517 bytes) indicates whether it is a bad
What ' s the problemWhen I make the nRF51 ' s DFU project appear "No UECC.h" error:And then find That:the UECC Library was an external library that's not a part of the SDK and it must being installed by the User.Installing MICRO-ECCMICRO-ECC is a open source library that's required to use the Cryptography library. When using MICRO-ECC, you must ensure compliance with the license of the library as stated in
(20 physical signal lines). It adopts the 10x12 (10 Io [or Lane] x 12 Io switching) frame format, it can transmit 10x12 bit information per DRAM clock. A southbound frame is divided into three command slots, as shown in, Command slot a conveyor belt address command. Command Slot B and C conveyor belt boycott command or write data to dram.Write data is transmitted through the command + wdata frame in the FBD south to the command and data connection. The command + wdata frame in each FBD channel
, the spare area stores additional information, bad block ECC verification, and so on. The structure of NAND Flash is a NAND flash device, 1 (device) = xxxx (blocks), 1 (Block) = xxxx (pages), 1 (page) = 528 (bytes) = data block size (512 bytes) + OOB block size (16 bytes, data block is the main area, OOB is the spare area, except the sixth byte of OOB, generally, the first three bytes of OOB are stored in the NAND Flash hardware
Board was shut down and restarted, I encountered an error in the mout ubi file system, prompting a bunch of errors and the partition was empty, the copied file is missing.
The problem is as follows:
Ubiattach/dev/ubi_ctrl-M 3
UBI error: ubi_io_read: Error-74 while reading 64 bytes from peb 1662: 0, read 64 bytes
UBI error: ubi_io_read: Error-74 while reading 64 bytes from peb 1663: 0, read 64 bytes
To analyze the problem, I opened both MTD and ubifs's debug log and saw some information;
# Defi
Introduction to Cryptographic algorithms
I. Cryptography INTRODUCTION
According to records, in 400 BC, the ancient Greeks invented the replacement code. 1881 the world's first telephone secrecy patent appeared. During the Second World War, the German military enabled the "Enigma" cipher Machine, which played a very important role in the war.
With the development of information and digital society, People's awareness of the importance of security and confidentiality has been increasing, so in 19
First, the Fault information
Log Summary
#dmesg
Mar 11:56:06 shtifme sunw,ultrasparc-iv+: [ID 929070 Kern.info] NOTICE: [AFT0] corrected system bus (CE) Event detected By CPU0 at Tl=0, Errid 0x006c59a9.5c742270
Mar 11:56:06 shtifme AFSR 0x00000002
Mar 11:56:06 shtifme fault_pc 0xf840a860 esynd 0x01b1 Slot b:j8000
Mar 11:56:06 shtifme sunw,ultrasparc-iv+: [ID 992219 kern.info] [AFT0] errid 0x006c59a9.5c742270 corrected Memory Error On Slot b:j8000 is intermittent
Mar 11:56:06 shtifme sunw,
PC machine, Just like the original parity correction memory was first applied to the server, now is not very common? So server memory is not a specific, it is the application of new memory technology in different time periods.
What is buffer and unbuffer?
A: Buffer is the buffer, can also be understood as a cache, the server and graphics workstation memory more applications, capacity of more than 64K, but with the constant increase in memory capacity, its capacity is also increasin
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