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Go: Dujiangyan idea6410 developer note color 1

PLL to be set, and the frequency division control is also complicated, although start. s has to copy, but you still need to figure it out, because the next programming is useful. The clock of 6410 is so complex that it is used to adapt to a wide range of internal peripherals. Different peripherals require different clocks. To set the clock speed, it is nothing more than defining several common clock frequencies, and then defining the frequency division coefficients of the PLL for these clock fr

Port the vswitch to the vswitch

various clocks. The clock structure of the is complicated. There are three PLL to be set, and the frequency division control is also complicated, although start. s has to copy, but you still need to figure it out, because the next programming is useful. The clock of 6410 is so complex that it is used to adapt to a wide range of internal peripherals. Different peripherals require different clocks. To set the clock speed, it is nothing more than defining several common clock frequencies, and then

BIOS Setup Parameter modification

work at the 133MHz frequency. 5, Memory PARITY/ECC check (memory parity/ECC check) Optional: disabled,enabled. If the system uses ECC memory, you can set this parameter to Enabled, or you must set the parameter to Disabled. ECC represents error check and correction (Error Checking and correction)  is generally the

How to set memory inside the BIOS

Brust Timing:cpu writes data such as cache, and then writes the latency of memory. Fast RAS to CAS Delay: The delay time between the line address trigger signal and the column address trigger signal. Usually the ras# drops down to cas# between the time. DRAM Lead-off the time before TIMING:CPU read/write memory. DRAM Speculative read: When set to allow, the time spent reading memory is one time period a

Tutorial on setting up a computer BIOS

whether the CPU built-in cache is turned on. Set to open by default. Set values are: Disabled (disabled); Enabled (Open). External Cache (external cache setting) Sets whether the external cache is turned on. Set to open by default. Set values are: Disabled (disabled); Enabled (Open). CPU L2 Cache ECC Checking (CPU Level two cache parity) Sets whether the CPU level two cache parity is turned on. Set to open by default. Set values are: Disable

BIOS Setup Illustration Tutorial-You won't understand when you're done.

extended memory capacity (read-only).Total memory This entry is used to display the total memory capacity (read-only).Iv. Advanced BIOS Features (High level BIOS function setting) Sub-menuSelect the "Advanced BIOS Features" entry in the main menu and enter the "Advanced BIOS Features" sub-menu such as 4Figure 4There are 20 children in the "Advanced BIOS Features" Sub-menu:Virus Warning (virus alarm) at system startup or after startup, if a program attempts to modify the system boot sector or ha

Specification of memory size in different Oracle versions, different oracle versions

DRAM.3rd-bit-further type description of the chip. S represents SDRAM, H Represents DDR, and G Represents SGRAM.4th or 5 bits-capacity and refresh rate. Different refresh rates are used for memory with the same capacity, and different numbers are used. 64, 62, 63, 65, 66, 67, 6A represents 64 Mbit capacity; 28, 27, 2A represents Mbit capacity; 56, 55, 57, 5A represents Mbit capacity; 51 represents the capacity of 512Mbit.6th, 7-bit: the number of dat

Featured questions for electronic companies

: interrupt request BIOS: Basic Input Output System USB: Universal Serial Bus VHDL: vhic Hardware Description Language SDR: Single Data Rate The abbreviation of a voltage controlled oscillator (VCO ). Dynamic random memory (Dram ). This term is just an alias for a boring foreign language, such as PCI, ECC, DDR, interrupt, pipeline IRQ, bios, USB, VHDL, and RAM (dynamic random memory) for a large-scale VCO (

One of the storage principles _ storage

device and easier to implement. Take a look at the picture below: Knowing what the basic structure of RAM looks like, let's talk about what happens when the byte is stored: The diagram above shows only the simplest condition, when there is only one RAM chip on the memory strip. For the X86 processor, it emits an address encoding with 22-bit binary digits via address bus select、read-11 bits are row addresses and 11 are column addresses, which are separated by the RAM address interface. The lin

Brief Introduction to RAID Disk Arrays

lower the cost of each byte.    The fastest speed is the register in the CPU, because it is expensive, so there are only dozens of bytes. In L1, L2, and L3 layers, high-speed caching is fast. It is implemented by SRAM (static random storage), and only a few ns are required for CPU access to high-speed caching, because the price is relatively expensive, only a few M ~ Dozens of MB of storage space. The primary storage is located on the L4 layer. Although the operation speed is not cache fast, it

Simply talk about raid

is the register in the CPU, because it's expensive, so it's only dozens of bytes.Located in the L1,L2,L3 layer is the cache, the speed of the cache is also very fast, it is implemented by SRAM (static random memory), the CPU access cache only need a few NS, because the price is relatively expensive, all only a few m~ dozens of m of storage space.is located in the L4 layer is main memory, running speed, although not cache fast, but the price is also much cheaper, it is implemented by

S5PV210 Development Series One _ development environment and startup mode

Channel 2), if the failure again, try the UART start, and then fail, it is USB boot, If it fails again, the START process is stopped.To support the boot of external devices, the s5pv210 has built-in 64K ROM and 96K SRAM. wherein the 64K ROM code is located in 0x00000000, is the Samsung solidified into the chip code, called BL0. After a power-on reset, the BL0 code executes first, BL0 first shuts down the watchdog, initializes the instruction cache, stack, function, PLL, and system clock, copies

What is the difference between DDR4 and DDR3?

progress, and as the DRAM industry leader, the first production DDR4 Samsung Electronics How can remain silent? The South Korean giant recently announced that it is accelerating the production of DDR4 memory particles, memory chips. Waigang, like the United States, Samsung also specifically mentioned that Intel will be released in the second half of the next generation of server platform Haswell-ep Xeon e5-2600 v3, said its own DDR4 memory is p

Solaris 10 System Configuration Tool

bash-3.2# PRTDIAG Report General System Information Systems Configuration:vmware, Inc. VMware Virtual Platformbios Configuration:phoenix Technologie S LTD6.00 ./ Geneva/ .= = Processor Sockets ====================================Version location Tag-------------------------------- --------------------------Pentium (R) III CPU Socket #0Pentium (R) III CPU Socket #1= = = Memory Device Sockets ================================Type Status Set Device Locator Bank Locator------- ------ --- -----------

S5PV210 Development Series Seven _nand Drive implementation

, compared to SLC, the price of general, capacity can be larger, the general speed, life expectancy (about 10,000 times erase). TLC, which stores 3bit of data for 3bit/cell, 1 storage units, has the lowest cost and the largest capacity compared to the same capacity, but with the slowest speed and shortest life (about 1000 erase writes). Currently on the market based on NAND flash memory, such as SD card, U disk and so on are mostly MLC type, but for high-capacity NAND memory, such as SD card 64G

Optimize BIOS settings to provide computer performance

closed it while setting CMOS. Turning on this feature will activate the cache in the CPU, which will greatly reduce the performance of the system, but it will increase the likelihood of overclocking success. I'm sure everyone will turn on this feature.   CPU Level 2 (CPU two cache, also called external cache, external cache) -The default setting for this feature should also be open L2. Turning on this feature activates your external cache. The external cache on the Pentium II processor runs at

What are the common terminology of memory

A detailed analysis of common memory terms: Bank:bank refers to the memory slot of the unit of calculation (also known as memory), which is the computer system and memory between the basic operating unit of data convergence. Memory speed: The speed of memory is calculated by the amount of time spent in data processing between each CPU and memory, in the cycle (NS) unit for Bus loops (buses). Memory Module (Memory module): Refers to the memory module is a printed circuit board has

Apple's latest file storage system in the eyes of a ZFS developer APFS

of basic needs changed the flash economy, and (Apple) as a flash consumer changed the impact on the industry (as it often does), making hybrid drives and pure flash arrays a boost in the market. 10 years ago SSDs were just as expensive as DRAM memory, and now they can compete for the market with hard drives.SSDs mimic the block addressing of traditional hard drives, but the internal workings are completely different. The magnetic media can read and w

X-loader and how to write to NAND X-loader

initializes memory controler, Load the formal bootloader:u-boot to further initialize the perimeter hardware and start the Linux kernel. Boot order: Bootrom:rom boot loader (internal RAM)-> X-loader (internal RAM)-> Uboot (external DDR)->kernel (external DDR) Question: How to write X-loaer to Nandflash. X-loader is the stage boot loader and are primarily responsible for initializing the DRAM controller and a few Essential hardware blocks. Because X

2 k Page k9k8g08 writepage readpage

2011-01-21 11:05:19| Category: Default Category | Font size subscription Static U32 writepage (U32 addr, U8 *buf){U32 I, MECC, SECC;U8 Stat, tmp[6], value;Addr = ~0x3f;INITECC (); Reset ECCMeccunlock (); Unlock Main area ECCNfchipen (); Open the Nandflash film selectionWaitnfbusy (); Waiting for a busy signalWrnfcmd (0x80); Page Write command Cycle 1WRNFADDR (0x00); Column Address A0~a7WRNFADDR (0x00); Column Address A8~a11Wrnfaddr ((addr>>0) 0xFF); Line Address A12~a19Wrnfaddr ((addr>>8) 0xFF

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