Set micro-network message (Wen/Liu Yang) January 14, 2017, the first IC Coffee International Smart Technology Industry Summit and Ictech Summit 2017 in Shanghai grandly held. The summit, with the theme of "ingenuity and excellence", assembled the ICT industry leaders and industry elites, and presented an unprecedented feast for the past year. Changjiang Storage CEO Mr. campaigned Yangtze River Storage CEO Mr. Campaigned to the "strategic thinking of the development of storage Industry", respectively, from the market dynamics, the possible success of external conditions, must be successful internal efforts and the Yangtze River storage Plan and progress four aspects do one by one explanation. Memory is a device that can store image data or text data, programs and other information, and remove the function when necessary. In terms of the classification of semiconductor memory technology, the current output of DRAM and NAND flash memory accounts for 95% of the global memory industry. IBS data predicts that the demand for NAND flash memory will continue to grow 10 times times over the next decade, mainly in the areas of cloud computing, IoT and data centers.   2016 year, Samsung Electronics in the DRAM and NAND flash market share at the same time occupy the first place, more and more high concentration. Campaigned believes that the memory market needs to break the status quo, for the Yangtze River Storage, is now a "best" point of time, there are many U.S. companies to come to the door, hoping to work with the Yangtze River storage to bring more choices for the market. according to statistics, in the global memory market, 55% of the market demand in China. The establishment of a large national fund has allowed China to give its greatest support to technology and capacity accumulation in terms of capital and policy, while China is facing a best period in terms of talent pooling, opportunities for international cooperation and industrial ecological support. Campaigned pointed out that we have no better entry point in the Mainstream IC field, memory is the opportunity. China's IC design and manufacturing rapid rise, but in the field of advanced IC manufacturing, China's market share is only 5%~10%, research and development investment in a huge, rapid development of technology and market changes, chip no tariff no cost advantage is the biggest reason. To succeed in entrepreneurship, finding the right people, hitting money and doing the right thing is three essential. First of all, to have the spirit of hard work, have the courage to have a successful entrepreneurial experience, and then put more investment in advanced technology and economic benefits in the field, in China to develop integrated circuits, how to do a good self-control, sustainable development is very important. Finally, under the international system, how to assemble the national resources to gather the global talents through the market competition, through the combination of independent research and development and international cooperation, seize the opportunity of each merger investment is very crucial. Yangtze River storage Large-scale investment plant as if "positional warfare", each of the most likely merger opportunities will become "mobile warfare", do a good "positional warfare" and "mobile warfare" combination, before more opportunities to succeed. Thus, from the perspective of business needs, external opportunities and market dynamics, 3D NAND is the Yangtze River storageOpportunity to successfully break through the technical field. 3D NAND Flash has a comprehensive advantage in terms of performance, capacity, reliability, cost and so on, while the stack layer is an important indicator of 3D NAND flash. campaigned pointed out that, from the NAND flash market and technology dynamics, the global memory companies in the 3D NAND products in the active preparation, 2018 will be more than 64 layers of 3D NAND product mass production listed, everyone has equipment depreciation pressure in, the Yangtze storage is not worried, As long as the full solution to technical problems. He stressed that the goal of the Changjiang storage was to make a profit during the depreciation period. in terms of products, there are still many technical challenges to 3D NAND, and there will be a lot of changes in technology and challenges in technology and devices. Yangtze River Storage will not simply follow the footsteps of the industry, will be through the development of leaps and bounds, the goal in 2019 to achieve with the world's cutting-edge half-generation technology, 2020 catch up with the leading technology, parallel with the world. on whether to develop DRAM in the future, campaigned believes that as a business, DRAM has a two increase in difficulty, on the one hand, competitors still have a large amount of depreciation in the production capacity exists, 2D NAND is also the case. On the other hand, the growth demand of DRAM market becomes relatively slow at present, it is difficult to realize economic benefit. So at this stage, the Yangtze River storage will not do no economic capacity expansion, but also choose opportunities to find acquisitions to further realize the expansion of DRAM capacity. According to campaigned, the Yangtze River Storage 32 Layer 3D NAND product progress smoothly, electrical characteristics and other indicators very good. The factory will be full of capacity in 2019, and we are under a lot of pressure. Changjiang Storage 32 Layer 3D NAND product showcase Changjiang Storage 32 Layer 3D NAND product electrical characteristics
Http://laoyaoba.com/ss6/html/62/n-626162.html
The Changjiang Storage 32 Layer 3D NAND is ready by the end of this year and is expected to catch up with the world's Forefront for 2020 years (some ppt is wonderful)
