Groffand launches FINFET transistor structure to optimize new generation action devices

GlobalFoundries has launched a new technology designed for fast-growing action markets to accelerate its top development blueprint. The company's 14NM-XM technology will provide customers with 3d"finfet"-crystal efficiency and energy advantages, not only reduce risk, but also accelerate time-to-market, thus helping the amorphous plant ecosystem to maintain the leadership of the action market while developing a new generation of intelligent action devices.

XM is the acronym for "extreme mobility", the industry's most cutting-edge, non-planar architecture, truly optimized for the action system Monocrystalline chip (SoC) design, providing a complete product solution from the transistor to the system level. In the 20nm technology node, this technology is expected to enhance 40%–60% battery life compared to the current 2D planar transistor.

14NM-XM with modular technology architecture, the perfect combination of 14nm FinFET components and GlobalFoundries Company will be mass production of 20NM-LPM manufacturing technology. The use of sophisticated 20NM-LPM technology, so that want to use FinFET SoC advantage of customers, can be the fastest speed transfer smoothly. Technical research and development work has been carried out and the silicon wafer has been tested through the GlobalFoundries Wafer 8 plant in Saratoga Gashir, New York. The initial production Design kit (PDKS) is now available and is expected to be available in 2013 for customer product projection.

GlobalFoundries Technology Long Gregg Bartlett said: "globalfoundries Investment FinFET Research and development has been more than 10 years, we will be based on this technology to enter the production phase. We are confident that this profound foundation will allow us to lead the industry into the finfet phase of production, as we have achieved in the field of dielectric metal Gate (HKMG) technology. 」

The FINFET architecture is designed with a traditional 2D transistor, and the conductive path is designed on both sides to form a 3d"fin-like structure that controls the flow of currents. The main advantages of FINFET technology are its excellent low-power characteristics. The 3D transistor is designed to operate at lower voltages and minimize current leaks, thus prolonging battery life for operational applications or reducing the power consumption of plug-in applications such as data center network chips.

"A lot of people don't know FinFET's construction is the same as the HKMG technology that drives action," says G. Dan Hutcheson, chief executive and director of VLSI Research. HKMG technology has achieved great innovation in reducing the leakage of electricity, and FinFET a big step forward on this basis, breaking through the obstacles of technology development in the years to come. But to play the full value of FinFET technology, the company must be energy-producing HKMG. GlobalFoundries started earlier in this area and has had two years ' experience in HKMG production. 」

GlobalFoundries developed a new technology definition method, and developed a cost-efficient and power-optimized FinFET technology to become the ideal choice for the action SoC market. The 14NM-XM architecture balances performance and power consumption, minimizing chip size and cost. The construction of the technology can achieve the best manufacturing convenience and design convenience, but also allows the designer to reuse the previous generation of the IP part of the product. In addition to the transistor structure, this technology also incorporates the requirements of the SoC hierarchy, such as support for system-wide performance and special operational application requirements.

Another key factor in building a comprehensive SoC optimization solution is the ability to use the expertise of the entire ecosystem, including EDA and design solutions partners and IP providers. Especially for the design community, FinFET technology is also accompanied by new considerations. GlobalFoundries's manufacturing development and technical architecture team has been working closely with the in-house design team and design ecosystem partners to launch the best technology and design environment.

GlobalFoundries recently announced the signing of a multi-year contract with arm for the use of FINFET manufacturing technology ARM processor design to launch the optimal SoC solution. The two companies have had years of experience in ARM CORTEX-A series processors, which will continue their previous efforts to drive the production of IP platforms to accelerate transfer to 3D FinFET transistors.

Dipesh Patel, deputy general manager of the arm entity's IP department, said: "FinFET technology will be a key driver in the development of the next generation of intelligent action equipment in the evolving era of hyper-action." Through our years of contact and cooperation with GlobalFoundries, we will be able to provide our common customers with advanced system performance and assist them to accelerate the transfer to the advantage of using FinFET technology as early as they can. The results will also become a platform for SOC applications based on the next generation of ARM processors and the GPU action market. The