Samsung releases 8Gb LPDDR4 mobile DRAM

Samsung today released the world's first 8,000 megabyte (GB) low power dual Data rate 4 (LPDDR4) mobile dram, according to PhoneArena, a technology website. This new product uses 20 nanometer fabrication craft, each die has 1GB capacity, has reached the market highest density level. In addition, Samsung says the new product's power consumption is controlled at a lower level, with 4 separate 8Gb chips that can be encapsulated into 1 4GB of memory and used on smartphones and other devices. The 8Gb LPDDR4 mobile DRAM supports faster applications and higher-resolution screens, allowing longer battery life while also bringing more functionality to the device. The new low voltage swing interrupt logic (LVSTL) interface, which provides a 3200MBPs transmission rate, is twice times the current volume production, the same use of 20 nm LPDDR3 mobile dram. Performance has also increased by 50% compared to the fastest DDR3 memory chips, with a 1.1-volt low-power structure, which also saves 40% of power. The 8Gb LPDDR4 mobile dram will be shipped next year and will be used in some high-end products.