Basic knowledge of circuit design (2)

I. Chinese semiconductor device model naming method
The model of a semiconductor device consists of five parts (the models of the Field Effect Device, special semiconductor device, composite tube, pin tube, and laser device are only part 3, 4, and 5. The five parts have the following meanings:
Part 1: digital representation of the Number of valid electrodes for a semiconductor device. 2-diode, 3-Transistor
Part 2: Material and polarity of the semiconductor device are represented by Chinese pinyin letters. Diode: A-N type Ge material, B-P type Ge material, C-N type silicon material, D-P type silicon material. Indicates the transistor: A-PNP type Ge material, B-NPN type Ge material, C-PNP type silicon material, D-NPN type silicon material.
Part 3: use Chinese pinyin letters to express the inner shape of a semiconductor device. P-common tube, V-fill tube, W-Steady Pressure Tube, C-parameter tube, Z-integral tube, L-rectifier, S-tunnel tube, N-damping tube, U-photoelectric device, k-switch, X-low frequency small power tube (f3mhz, pc1w), A-high-frequency power tube (F> 3 MHz, Pc> 1 W), T-semiconductor Thyristor (controllable rectifier), Y-Body Effect Device, B-Avalanche tube, J-step recovery tube, CS-field effect tube, BT-semiconductor special device, FH-composite tube, pin-pin tube, JG-laser device.
Part 4: number representation
Part 5: Use Chinese pinyin letters to indicate the specification number
For example, 3dg18 indicates a high-frequency transistor of type silicon material.
Japan Semiconductor Discrete Device Model naming method
Ii. semiconductor discrete devices produced in Japan are composed of five to seven parts. Generally, only the first five parts are used. The symbols of each part are as follows:
Part 1: Use a number to indicate the number or type of valid electrodes of the device. 0-photoelectric (I .e. photosensitive) diode transistor and the combination of the above components, 1-diode, 2 three poles or other devices with two pnknots, 3-with four active electrodes or other devices with three pnknots this type of push.
Part 2: Japanese electronics industry association jeia registration mark. S-indicates a semiconductor discrete device that has been registered with the Japanese electronics industry association jeia.
Part 3: Use letters to indicate the polarity and type of materials used by the device. A-PNP Type High Frequency tube, B-PNP Type Low Frequency tube, C-NPN Type High Frequency tube, D-NPN Type Low Frequency tube, F-P control pole thyristor, G-N control pole thyristor, H-N base Pole Single Junction Transistor, J-P channel field effect tube, K-N Channel and M-bidirectional thyristor.
Part 4: Use numbers to indicate the sequence number registered with the Japanese electronics industry association jeia. Two or more integers-starting from "11", represent the sequence number registered at the Japanese electronics industry association jeia; the same sequence number can be used for devices with the same performance in different companies; the larger the number, more recent products.
Part 5: Use letters to indicate improved product logos of the same model. A, B, C, D, E, and F indicate that this device is an improved product of the original model.
Model naming method for semiconductor discrete devices in the United States
III. The naming of U. S. transistors or other semiconductor devices is chaotic. The naming method for semiconductor discrete devices is as follows:
Part 1: use symbols to indicate the type of device purpose. Jan-military level, jantx-special military level, jantxv-super special military level, Jans-Aerospace level, (none)-non-military supplies.
Part 2: numbers are used to represent the number of pn. 1-diode, 2 = transistor, 3-three PN junction devices, N-n pn junction devices.
Part 3: American Electronics Industry Association (EIA) registration mark. N-the device has been registered with the American Electronics Industry Association (EIA.
Part 4: US electronics industry association Sn. Multi-digit-the serial number of the device registered at the Electronics Industry Association of America.
Part 5: Use letters to indicate device sub-files. A, B, C, D, and other components-different types of devices of the same model. For example: jan2n3251a indicates PNP Silicon High Frequency small power switch transistor, Jan-military level, 2-transistor, N-EIA registration mark, 3251-eia registration sequence number, A-2N3251A file.
Iv. Naming of semiconductor device models by the International Electronics Federation
Germany, France, Italy, the Netherlands, Belgium and other European countries, as well as Hungary, Romania, Yugoslavia, Poland and other eastern European countries, mostly using the International Federation of electronics semiconductor discrete device model naming method. This naming method consists of four basic parts. The symbols and meanings of each part are as follows:
Part 1: use letters to indicate the materials used by the device. A-the band gap of the materials used by the device. Eg = 0.6 ~ 1.0ev e. g = 1.0 ~ of materials used for GE and B-Devices ~ 1.3ev e. g. of materials used for silicon and C-devices> 1.3ev e. g. of materials used for Indium antimony and D-devices <0.6ev E. Composite Materials Used for photocells
Part 2: Use letters to indicate the device type and main features. A-detection switch mixing diode, B-variable-capacity diode, C-low-frequency small-power transistor, D-low-frequency high-power transistor, e-tunnel diode, F-high-frequency small-power transistor, G-compound devices and other devices, H-magnetic diode, Hall element in K-open magnetic circuit, L-high-frequency high-power transistor, Hall element in M-closed magnetic circuit, p-photosensitive device, Q-emitting device, R-small-power thyristor, S-small-power switch, T-high-power thyristor, U-high-power switch, X-multiplier, Y-rectifying diode, Z-regulated diode.
Part 3: Add a digit or a letter to indicate the registration number. Three digits-the registration number representing the general semiconductor device, one letter plus two digits-indicates the registration number of the special semiconductor device.
Part 4: Use letters to split devices of the same type. A, B, C, D, and E branch labels-indicates that a device of the same model is divided by a certain parameter.
In addition to the four basic parts, suffixes are sometimes added to differentiate features or further classification. Common suffixes are as follows:
1. The suffix of the regulator diode model. The first part of its suffix is a letter indicating the allowable error range of the stable voltage value, the letters A, B, C, D, and E indicate the allowable error of ± 1%, ± 2%, ± 5%, and ± 10% respectively. The suffix of the second part is a number, an integer that represents the nominal steady voltage. The third part of the suffix is the letter V, which represents the decimal point. The number after the letter V is a small value of the nominal steady voltage of the steady pressure tube.
2. The suffix of the rectification diode is a number, indicating the maximum reverse peak voltage value of the device. Unit: volt.
3. The extension of the thyristor model is also a number. It usually marks the voltage value of the maximum reverse peak voltage value and the value of the maximum reverse turn-off voltage.
For example, bdx51-indicates the low-frequency and high-power transistor of the silicon, and af239s-indicates the high-frequency and small-power transistor of the PNP ge.
V. Early European Semiconductor Discrete Device Model naming method
Some European countries, such as Germany and the Netherlands, use the following naming method.
Part 1: O-represents a semiconductor device
Part 2: A-diode, C-transistor, ap-photodiode, CP-phototransistor, Az-voltage control tube, and RP-photoelectric device.
Part 3: The register serial number of the device.
Part 4: A, B, and C branch components-represents a variant product of the same device model.
The Russian semiconductor device model naming method is not described here because it is rarely used.
I. Parameter symbols of Semiconductor Diodes and their meanings
CT --- Barrier Capacitance
CJ --- junction (pole) capacitor, indicating the total capacitance of the GE detection diode under the specified bias on both ends of the diode
Cjv --- Bias Capacitance
CO --- zero-bias Capacitor
CjO --- zero-Bias Capacitance
CjO/CJN --- Capacitance change
CS --- shell capacitor or encapsulation Capacitor
CT --- total Capacitance
CTV --- voltage and temperature coefficient. Ratio of relative changes of stable voltage to absolute changes of ambient temperature under test current
CTC --- capacitance Temperature Coefficient
CVN --- nominal Capacitor
If --- forward DC current (Forward test current ). GE detection diodes pass through the pole current under the specified Forward Voltage VF; silicon rectification tube, silicon stack under the specified conditions of use, maximum operating current (average value) that can pass continuously in the sine half wave, maximum forward DC current that can pass through the silicon switching diode at rated power, and the current given when measuring the forward electrical parameters of the Voltage Regulator Diode
If (AV) --- forward average current
IFM (IM) --- forward peak current (forward maximum current ). Maximum forward pulse current passing through the diode at rated power. Ultimate current of the light emitting diode.
Ih --- Constant Current and maintenance current.
II --- glow current of Light Emitting Diode
Ifrm --- forward repetition peak current
IFSM --- positive non-repetitive peak current (surge current)
Io --- rectifying current. Operating current used in specified frequency and specified voltage conditions in a specific line
If (OV) --- forward overload current
Il --- photocurrent or steady-flow diode ultimate current
Id --- dark current
Ib2 --- baseline modulation current in a single-junction transistor
IEM --- peak emission current
Ieb10 --- reverse current between the transmitting pole and the first base pole in the dual-base Pole Single-junction transistor
Ieb20 --- emitter current in dual-base Pole Single-junction transistor
ICM --- maximum output average current
Ifmp --- forward Pulse Current
IP --- peak point current
IV --- valley current
Remote sensing --- trigger current of Thyristor Control pole
IgD --- Thyristor Control pole does not trigger current
Igfm --- controls extremely positive peak current
Ir (AV) --- reverse average current
Ir (in) --- reverse DC current (reverse leakage current ). The specified reverse current is used to test the reverse characteristics. The current used by the silicon stack in the sine half-wave resistive load circuit when the reverse voltage is specified; current used when the two ends of the silicon switching diode are added with the reverse working voltage VR; leakage current generated by the voltage regulator diode under the reverse voltage; leakage current of the whole tube under the sine half-wave maximum reverse working voltage.
Rem --- reverse peak current
IRR --- Thyristor reverse repetition average current
IDR --- average repetition current of thyristor disconnected state
Irrm --- reverse repetition peak current
Irsm --- reverse non-repetitive peak current (Reverse Surge Current)
IRP --- reverse recovery current
Iz --- stable voltage current (reverse test current ). Given reverse current when testing reverse Electrical Parameters
Izk --- Steady Pressure Pipe knee current
IOM --- maximum forward (rectification) Current. Maximum forward instantaneous current that can be sustained under specified conditions; Maximum operating current that can pass continuously through the GE detection diode in the sine half-wave Rectifying Circuit with resistance Load
Izsm --- Voltage Regulator diode Surge Current
Izm --- maximum regulated current. Current permitted by the voltage regulator diode at maximum dissipation power
If --- total forward Instantaneous Current
IR --- total reverse Instantaneous Current
IR --- reverse recovery current
IOP --- operating current
Is --- Steady Current of steady-flow Diode
F --- frequency
N --- Capacitance change index; capacitance ratio
Q --- excellent value (Quality Factor)
Delta VZ --- voltage drift of Voltage Regulator
DI/dt --- critical rise rate of on-state current
DV/dt --- critical rise rate of on-state voltage
PB --- withstand pulse burning power
PFT (AV) --- forward conduction average dissipation power
Pftm --- positive peak dissipation power
PFT --- total instantaneous power dissipation of forward conduction
PD --- dissipation power
PG --- average power of the Gate Pole
PGM --- peak door power
PC --- controls the average power of the pole or the dissipation power of the Collector
Pi --- input power
PK --- maximum Switch Power
PM --- rated power. Maximum power that a silicon diode can withstand at a temperature not higher than 150 degrees
PMP --- maximum leakage Pulse Power
PMS --- maximum withstand Pulse Power
Po --- output power
PR --- Reverse Surge power
Ptot --- total dissipation power
Pomax --- maximum output power
PSC --- continuous output power
PSM --- non-repetitive surge power
Pzm --- maximum dissipation power. Maximum power allowed by the voltage regulator diode under specified conditions
RF (r) --- forward differential resistance. When the positive wizard is connected, the current shows obvious non-linear characteristics with the increase of the voltage index. Under a certain positive voltage, the voltage increases by a small amount of △v, and the forward current increases by △i, then △v/△i is called a differential resistance.
RBB --- baseline resistance of dual Base Transistor
Re --- RF Resistance
RL --- Load Resistance
RS (RS) ---- Series Resistance
Rth ---- Thermal Resistance
R (th) JA ---- thermal resistance to the environment
RZ (Ru) --- dynamic resistance
R (th) JC --- thermal resistance to the shell
R Delta --- attenuation resistance
R (th) --- transient Resistance
Ta --- Ambient Temperature
TC --- Shell Temperature
TD --- Delay Time
TF --- decrease time
TFR --- forward recovery time
TG --- circuit reversing Shutdown Time
TGT --- time when the logstore is activated
TJ --- Temperature
Tjm --- maximum temperature
Ton --- activation time
Toff --- Shutdown Time
Tr --- rising time
TRR --- reverse recovery time
TS --- storage time
Tstg --- temperature compensated diode Storage Temperature
A --- Temperature Coefficient
λ P --- peak luminescence Wavelength
△λ --- spectral half width
θ --- single-junction transistor Partial voltage ratio or efficiency
VB --- reverse peak Breakdown Voltage
VC --- rectifying input voltage
Vb2b1 --- baseline Voltage
Vbe10 --- reverse voltage between the emitter pole and the first base pole
VEB --- saturated pressure drop
VFM --- maximum forward voltage drop (Forward peak voltage)
VF --- forward voltage drop (Forward DC voltage)
△Vf --- Positive Pressure Drop difference
Vdrm --- off-state repetition Peak Voltage
VGT --- gate trigger Voltage
VGD --- door pole does not trigger Voltage
Vgfm --- forward peak voltage of the Gate Pole
Vgrm --- reverse peak voltage of the Gate Pole
VF (AV) --- forward average voltage
VO --- AC input voltage
Vom --- maximum output average voltage
VOP --- operating voltage
Vn --- center voltage
VP --- Peak Voltage
VR --- reverse working voltage (reverse DC voltage)
VRM --- reverse peak voltage (maximum test voltage)
V (BR) --- Breakdown Voltage
Vth --- Threshold Voltage)
Vrrm --- reverse repetition peak voltage (Reverse Surge Voltage)
Vrwm --- reverse Peak Voltage
V v --- Valley Voltage
VZ --- stable voltage
△Vz --- Voltage Increment in the regulated range
Vs --- open voltage (signal voltage) or steady current voltage of the steady current Tube
AV --- voltage and Temperature Coefficient
VK --- knee voltage (steady-flow diode)
Vl --- ultimate Voltage
Ii. Parameter symbol of Bipolar Transistor and Its Significance
CC --- collector capacitance
CCB --- capacitance between collector and base
CCE --- emitter pole grounding output capacitor
CI --- input Capacitor
CIB --- common base input Capacitor
CIE --- input capacitor of the co-emission pole
CIES --- co-emission pole short-circuit input Capacitor
CIEO --- open-circuit input capacitor for common emission poles
CN --- neutralization capacitance (external circuit parameters)
CO --- output capacitor
Cob --- common base output capacitor. In the base pole circuit, the output capacitance between the collector and the base pole
COE --- co-emission Pole Output Capacitor
Coeo --- open circuit output capacitor of the common emission pole
Cre --- co-emission pole feedback capacitor
CIC --- collector junction barrier
CL --- load capacitance (external circuit parameters)
CP --- parallel capacitor (external circuit parameters)
Bvcbo --- Open emission pole, breakdown voltage between collector and base pole
Bvceo --- open-circuit baseline, Ce Junction Breakdown Voltage
Bvebo --- open collector EB Junction Breakdown Voltage
Bvces --- core and launch pole short circuit ce Junction Breakdown Voltage
Bv cer --- the base pole and the transmitting pole are connected in a series with a resistance, and the CE junction is broken down at the voltage.
D --- duty cycle
FT --- feature frequency
Fmax --- maximum oscillation frequency. Operating frequency when the power gain of the transistor is equal to 1
Hfe --- static current amplification coefficient of co-emission pole
Hie --- co-emission static Input Impedance
Hoe --- co-emission pole static output Conductivity
H re --- co-emission pole static voltage feedback coefficient
Hie --- short-circuit Input Impedance of extremely small Signals
HRE --- open-circuit voltage feedback coefficient of a co-launch minor signal
Hfe --- short-circuit voltage amplification coefficient of a co-launch minor signal
Hoe --- open-circuit outputs of extremely small co-Emission Signals
IB --- average base-pole DC current or AC current
IC --- average value of collector DC current or AC current
IE --- average DC current or AC current of the transmitting pole
ICBO --- ground-based, open-circuit at the launch pole, reverse cut-off current between the collector and the base Pole under the specified VCB reverse voltage
Iceo --- the ground of the transmitting pole. The ground is open to the ground and the reverse cut-off current between the collector and the transmitting pole is under the specified reverse voltage VCE.
Iebo --- ground of the base, open to ground by the collector, and reverse cut-off current between the emission pole and the base Pole under the specified reverse voltage VEB
ICER --- the series resistance R between the base and the emission pole. When the voltage VCE between the collector and the emission pole is set, the reverse cut-off current between the collector and the emission pole
ICES --- the ground of the transmitting pole, short circuit of the base pole to the ground, and the reverse cut-off current between the collector and the transmitting Pole under the specified reverse voltage VCE
Icex --- the ground of the emission pole. The specified bias is added between the base and the emission pole. Under the specified reverse bias VCE, the reverse cut-off current between the collector and the emission pole
ICM --- the maximum mean value of the maximum allowable current or AC current of the collector.
IBM --- the maximum value of DC current that can pass continuously through the base pole or the maximum average value of AC current within the range where the collector allows the dissipation of power
ICMP --- maximum allowable pulse current of the Collector
ISB --- secondary breakdown current
Iagc --- forward automatic current control
PC --- collector dissipation power
PCM --- maximum allowable power dissipation of the Collector
Pi --- input power
Po --- output power
POSC --- oscillating power
Pn --- noise power
Ptot --- total dissipation power
ESB-secondary breakdown energy
Rbb' --- base area extended resistance (base area intrinsic resistance)
Rbb' CC --- the time constant of the base-collector, that is, the product of the base-pole extended resistance and the current capacity of the collector.
Rie --- input resistance when the transmitting pole is grounded and the AC output is short-circuited
Roe --- specifies the output resistance for short-circuit AC input measured under VCE, IC or IE and frequency conditions.
Re --- external emission pole resistance (external circuit parameters)
RB --- external baseline resistance (external circuit parameters)
RC --- external collector resistance (external circuit parameters)
RBE --- external base pole-emitter pole resistance (external circuit parameters)
RL --- load resistance (external circuit parameters)
RG --- signal source internal resistance
Rth --- Thermal Resistance
Ta --- Ambient Temperature
TC --- Shell Temperature
TS --- temperature settlement
Tjm --- maximum allowable temperature Junction
Tstg --- Storage Temperature
TD ---- Delay Time
Tr --- rising time
TS --- storage time
TF --- decrease time
Ton --- activation time
Toff --- Shutdown Time
VCB --- collector-base (DC) Voltage
VCE --- collector-emitter _voltage
VBE --- base pole (DC) Voltage
Vcbo --- ground-based, open-circuit with transmitting pole to ground, maximum withstand voltage between collector and base Pole under specified conditions
Vebo --- ground of the base, open to ground with the collector, and the maximum withstand voltage between the emission pole and the base Pole under specified conditions
Vceo-The launch pole is grounded, the base pole is open to the ground, and the highest voltage between the collector and the launch pole is under specified conditions.
Vcer --- the ground of the transmitting pole. The base and the transmitting pole are connected in series with resistance R, and the highest voltage between the collector and the transmitting Pole under the specified conditions.
Vces --- ground of the transmitting pole, short-circuit of the base pole to the ground, maximum withstand voltage between the collector and the transmitting Pole under specified conditions
Vcex --- the ground of the emission pole. A specified bias is added between the base and the emission pole, and the highest withstand voltage between the collector and the emission Pole under specified conditions.
VP --- passthrough voltage.
VSB-secondary Breakdown Voltage
VBB --- base (DC) power supply voltage (external circuit parameters)
VCC --- collector (DC) power supply voltage (external circuit parameters)
Vee --- launch pole (DC) power supply voltage (external circuit parameters)
VCE (SAT) --- specifies the saturation pressure drop between collector and emission poles under IC and IB conditions.
VBE (SAT) --- specifies the base-emission saturation pressure drop (Forward pressure drop) under IC and IB conditions)
Vagc --- forward automatic gain control voltage
Vn (p-p) --- peak value of equivalent noise voltage at the input end
V n --- noise voltage
CJ --- junction (pole) capacitor, indicating the total capacitance of the GE detection diode under the specified bias on both ends of the diode
Cjv --- Bias Capacitance
CO --- zero-bias Capacitor
CjO --- zero-Bias Capacitance
CjO/CJN --- Capacitance change
CS --- shell capacitor or encapsulation Capacitor
CT --- total Capacitance
CTV --- voltage and temperature coefficient. Ratio of relative changes of stable voltage to absolute changes of ambient temperature under test current
CTC --- capacitance Temperature Coefficient
CVN --- nominal Capacitor
If --- forward DC current (Forward test current ). GE detection diodes pass through the pole current under the specified Forward Voltage VF; silicon rectification tube, silicon stack under the specified conditions of use, maximum operating current (average value) that can pass continuously in the sine half wave, maximum forward DC current that can pass through the silicon switching diode at rated power, and the current given when measuring the forward electrical parameters of the Voltage Regulator Diode
If (AV) --- forward average current
IFM (IM) --- forward peak current (forward maximum current ). Maximum forward pulse current passing through the diode at rated power. Ultimate current of the light emitting diode.
Ih --- Constant Current and maintenance current.
II --- glow current of Light Emitting Diode
Ifrm --- forward repetition peak current
IFSM --- positive non-repetitive peak current (surge current)
Io --- rectifying current. Operating current used in specified frequency and specified voltage conditions in a specific line
If (OV) --- forward overload current
Il --- photocurrent or steady-flow diode ultimate current
Id --- dark current
Ib2 --- baseline modulation current in a single-junction transistor
IEM --- peak emission current
Ieb10 --- reverse current between the transmitting pole and the first base pole in the dual-base Pole Single-junction transistor
Ieb20 --- emitter current in dual-base Pole Single-junction transistor
ICM --- maximum output average current
Ifmp --- forward Pulse Current
IP --- peak point current
IV --- valley current
Remote sensing --- trigger current of Thyristor Control pole
IgD --- Thyristor Control pole does not trigger current
Igfm --- controls extremely positive peak current
Ir (AV) --- reverse average current
Ir (in) --- reverse DC current (reverse leakage current ). The specified reverse current is used to test the reverse characteristics. The current used by the silicon stack in the sine half-wave resistive load circuit when the reverse voltage is specified; current used when the two ends of the silicon switching diode are added with the reverse working voltage VR; leakage current generated by the voltage regulator diode under the reverse voltage; leakage current of the whole tube under the sine half-wave maximum reverse working voltage.
Rem --- reverse peak current
IRR --- Thyristor reverse repetition average current
IDR --- average repetition current of thyristor disconnected state
Irrm --- reverse repetition peak current
Irsm --- reverse non-repetitive peak current (Reverse Surge Current)
IRP --- reverse recovery current
Iz --- stable voltage current (reverse test current ). Given reverse current when testing reverse Electrical Parameters
Izk --- Steady Pressure Pipe knee current
IOM --- maximum forward (rectification) Current. Maximum forward instantaneous current that can be sustained under specified conditions; Maximum operating current that can pass continuously through the GE detection diode in the sine half-wave Rectifying Circuit with resistance Load
Izsm --- Voltage Regulator diode Surge Current
Izm --- maximum regulated current. Current permitted by the voltage regulator diode at maximum dissipation power
If --- total forward Instantaneous Current
IR --- total reverse Instantaneous Current
IR --- reverse recovery current
IOP --- operating current
Is --- Steady Current of steady-flow Diode
F --- frequency
N --- Capacitance change index; capacitance ratio
Q --- excellent value (Quality Factor)
Delta VZ --- voltage drift of Voltage Regulator
DI/dt --- critical rise rate of on-state current
DV/dt --- critical rise rate of on-state voltage
PB --- withstand pulse burning power
PFT (AV) --- forward conduction average dissipation power
Pftm --- positive peak dissipation power
PFT --- total instantaneous power dissipation of forward conduction
PD --- dissipation power
PG --- average power of the Gate Pole
PGM --- peak door power
PC --- controls the average power of the pole or the dissipation power of the Collector
Pi --- input power
PK --- maximum Switch Power
PM --- rated power. Maximum power that a silicon diode can withstand at a temperature not higher than 150 degrees
PMP --- maximum leakage Pulse Power
PMS --- maximum withstand Pulse Power
Po --- output power
PR --- Reverse Surge power
Ptot --- total dissipation power
Pomax --- maximum output power
PSC --- continuous output power
PSM --- non-repetitive surge power
Pzm --- maximum dissipation power. Maximum power allowed by the voltage regulator diode under specified conditions
RF (r) --- forward differential resistance. When the positive wizard is connected, the current shows obvious non-linear characteristics with the increase of the voltage index. Under a certain positive voltage, the voltage increases by a small amount of △v, and the forward current increases by △i, then △v/△i is called a differential resistance.
RBB --- baseline resistance of dual Base Transistor
Re --- RF Resistance
RL --- Load Resistance
RS (RS) ---- Series Resistance
Rth ---- Thermal Resistance
R (th) JA ---- thermal resistance to the environment
RZ (Ru) --- dynamic resistance
R (th) JC --- thermal resistance to the shell
R Delta --- attenuation resistance
R (th) --- transient Resistance
Ta --- Ambient Temperature
TC --- Shell Temperature
TD --- Delay Time
TF --- decrease time
TFR --- forward recovery time
TG --- circuit reversing Shutdown Time
TGT --- time when the logstore is activated
TJ --- Temperature
Tjm --- maximum temperature
Ton --- activation time
Toff --- Shutdown Time
Tr --- rising time
TRR --- reverse recovery time
TS --- storage time
Tstg --- temperature compensated diode Storage Temperature
A --- Temperature Coefficient
λ P --- peak luminescence Wavelength
△λ --- spectral half width
θ --- single-junction transistor Partial voltage ratio or efficiency
VB --- reverse peak Breakdown Voltage
VC --- rectifying input voltage
Vb2b1 --- baseline Voltage
Vbe10 --- reverse voltage between the emitter pole and the first base pole
VEB --- saturated pressure drop
VFM --- maximum forward voltage drop (Forward peak voltage)
VF --- forward voltage drop (Forward DC voltage)
△Vf --- Positive Pressure Drop difference
Vdrm --- off-state repetition Peak Voltage
VGT --- gate trigger Voltage
VGD --- door pole does not trigger Voltage
Vgfm --- forward peak voltage of the Gate Pole
Vgrm --- reverse peak voltage of the Gate Pole
VF (AV) --- forward average voltage
VO --- AC input voltage
Vom --- maximum output average voltage
VOP --- operating voltage
Vn --- center voltage
VP --- Peak Voltage
VR --- reverse working voltage (reverse DC voltage)
VRM --- reverse peak voltage (maximum test voltage)
V (BR) --- Breakdown Voltage
Vth --- Threshold Voltage)
Vrrm --- reverse repetition peak voltage (Reverse Surge Voltage)
Vrwm --- reverse Peak Voltage
V v --- Valley Voltage
VZ --- stable voltage
△Vz --- Voltage Increment in the regulated range
Vs --- open voltage (signal voltage) or steady current voltage of the steady current Tube
AV --- voltage and Temperature Coefficient
VK --- knee voltage (steady-flow diode)
Vl --- ultimate Voltage
Iii. Meaning of the parameter symbol of the FET
CDS --- drain-source capacitor
CDU --- drain-substrate Capacitor
CGD --- grid-source capacitor
CGS --- drain-source capacitor
CISS --- gate short circuit co-source input Capacitor
Coss --- gate short circuit co-source output capacitor
CRSs --- gate short circuit co-source reverse transmission Capacitor
D --- duty cycle (Air occupancy coefficient, external circuit parameters)
DI/dt --- current rise rate (external circuit parameters)
DV/dt --- voltage rise rate (external circuit parameters)
Id --- drain current (DC)
IDM --- drain pulse current
ID (on) --- on-state drain current
Idq --- static drain current (RF power tube)
IDS --- leakage source current
IDSM --- maximum leakage source current
IDSS --- grid-drain current during source Short Circuit
IDS (SAT) --- channel saturation current (drain source saturation current)
IG --- gate current (DC)
IGF --- forward grid current
IGR --- reverse grid current
Igdo --- the cutoff gate current when the source pole is open
Igso --- the cutoff gate current when the pole drain is open
IgM --- gate Pulse Current
IGP --- peak Gate Current
If --- diode forward current
IGSS --- cutoff grid current when a very short path is missing
Idss1 --- saturated current of the first pipe drain source
Idss2 --- saturated current of the second pipe drain source
IU --- substrate current
IPR --- current pulse peak value (external circuit parameters)
GFS --- forward cross-export
GP --- power gain
GPS --- common source pole neutralization high-frequency power gain
GPG --- Common Gate neutralization high-frequency power gain
GPD --- Common drain pole neutralization high-frequency power gain
GGD --- grid leakage Guide
GDS --- leakage source Conductivity
K --- offset voltage and Temperature Coefficient
Ku --- Transmission Coefficient
L --- load inductance (external circuit parameters)
LD --- drain Inductance
Ls --- source pole Inductance
RDS --- source leakage resistance
RDS (on) --- leakage source communication Resistance
RDS (of) --- leakage source disconnection Resistance
RGD --- grid leakage resistance
RGS --- gate source resistance
RG --- gate external resistance (external circuit parameters)
RL --- load resistance (external circuit parameters)
R (th) JC --- crust Thermal Resistance
R (th) JA --- junction Thermal Resistance
PD --- drain dissipation power
PDM --- maximum allowable power dissipation of the drain pole
Pin -- input power
Pout --- output power
PPK --- Pulse Power Peak (external circuit parameters)
To (on) --- activation delay
TD (off) --- shutdown delay time
Ti --- rising time
Ton --- activation time
Toff --- Shutdown Time
TF --- decrease time
TRR --- reverse recovery time
TJ --- Temperature
Tjm --- maximum allowable temperature Junction
Ta --- Ambient Temperature
TC --- Shell Temperature
Tstg --- Storage Temperature
VDS --- leakage source voltage (DC)
Vgs --- grid source voltage (DC)
Vgsf-forward gate source voltage (DC)
Vgsr-reverse gate source voltage (DC)
VDD --- drain (DC) power supply voltage (external circuit parameters)
Vgg --- gate (DC) power supply voltage (external circuit parameters)
VSS --- source pole (DC) power supply voltage (external circuit parameters)
Vgs (th) --- open voltage or valve Voltage
V (BR) DSS --- leakage source Breakdown Voltage
V (BR) GSS --- gate source breakdown voltage during transient disconnection
VDS (on) --- leakage source public Voltage
VDS (SAT) --- leakage source saturation voltage
VGD --- grid leakage voltage (DC)
VSU --- source substrate voltage (DC)
VDU --- substrate leakage voltage (DC)
Vgu --- gate substrate voltage (DC)
Zo --- driver source internal resistance
ETA --- drain efficiency (RF power tube)
Vn --- noise voltage
Aid --- Temperature Coefficient of Drain Current
ARDS --- Temperature Coefficient of Leakage source resistance
Basic knowledge of circuit design (5) -- relay I. working principle and characteristics of Relay
A relay is an electronic controller. It has a control system (also called an input loop) and a controlled system (also called an output loop). It is usually used in an automatic control circuit, it is actually an "automatic switch" that uses a small current to control a large current ". Therefore, the circuit plays a role in automatic adjustment, security protection, and conversion circuit.
1. working principle and characteristics of electromagnetic relay
Electromagnetic relay is generally composed of core, coil, armature, contacts Reed, etc. As long as a certain voltage is added to both ends of the coil, the coil will flow through a certain amount of current, resulting in electromagnetic effect, the armature will overcome the pull force of the return spring under the action of the electromagnetic force to suck to the core, so as to drive the dynamic contact and static contact (normally open contact) of the armature to suck. When the coil is powered off, the electromagnetic suction will also disappear, and the armature will return to the original position in the reverse force of the spring, so that the dynamic contact and the original static contact (normally closed contact) suck together. In this way, the transfer and disconnection in the circuit are achieved. For the "normally open, normally closed" contacts of the relay, it can be distinguished as follows: when the relay coil is not energized, the static contacts in the disconnected state are called "normally open contacts "; A static contact in the active state is called a normally closed contact ".
2. working principle and characteristics of thermal Dry Spring Relay
Thermal Dry Spring relay is a new type of thermal switch that uses thermal magnetic material to detect and control temperature. It consists of a thermal magnetic ring, a constant magnetic ring, a reed pipe, a heat-conducting mounting chip, a plastic substrate, and other accessories. Thermal Dry Spring Relay does not need coil excitation, and the magnetic drive switch action is generated by the constant magnetic ring. Whether or not the constant magnetic ring can provide magnetic force to the reed is determined by the temperature control characteristics of the magnetic ring.
3. working principle and characteristics of solid state relays (SSR)
Solid state relay is a four-end device with two terminals as the input end and the other two terminals as the output end. It uses an isolating device in the middle to achieve electrical isolation of the input and output.
Solid state relays can be divided into ac type and DC type by load power type. The switch type can be divided into the open and closed types. According to the isolation type can be divided into hybrid type, transformer isolation type and photoelectric isolation type, photoelectric isolation type is the most ..
Ii. Technical Parameters of Main relay Products
1. rated operating voltage
It refers to the voltage required by the coil when the relay works normally. Depending on the type of the relay, it can be either AC voltage or DC voltage.
2. DC Resistance
It refers to the DC resistance of the coil in the relay, which can be measured.
3. Current Absorption
It refers to the minimum current that a relay can generate a combination operation. In normal use, the given current must be slightly greater than the current, so that the relay can work stably. The operating voltage of the coil shall not exceed 1.5 times of the rated operating voltage. Otherwise, the coil will be burned out due to a large amount of current.
4. Release current
It refers to the maximum current in which the relays generate a release action. When the current of the relay is reduced to a certain extent, the relay will return to the release state of the unpowered state. At this time, the current is much less than the suction current.
5. Contact switching voltage and current
It refers to the voltage and current that the relay allows to load. It determines the size of the voltage and current that the relay can control. It cannot exceed this value during use, otherwise it is easy to damage the contacts of the relay.
Iii. Test Relays
1. Test the contact resistance.
The resistance of the normally closed contact and the dynamic point is measured using the resistance file of the hichina district. The resistance value of the normally open contact and the dynamic point is 0, and the resistance value of the constant open contact and the dynamic point is infinite. From this, we can tell that it is a normally closed contact and that it is a normally open contact.
2. Test the coil resistance.
The resistance value of the relay coil can be measured with a 10-Ω value to determine whether there is an open circuit in the coil.
3. Measure the transfer voltage and the transfer current.
Find the adjustable regulated power supply and current meter, input a set of voltage to the relay, and input the current meter in the power supply circuit for monitoring. Slowly increase the power supply voltage. When you hear the sound of the relay, write down the transfer voltage and the transfer current. For accuracy, you can try multiple times to calculate the average value.
4. Measurement of release voltage and release current
It is also like the above connection test, when the relay suction, and then gradually reduce the power supply voltage, when you hear the relay again release sound, write down the voltage and current at this time, you can also try several times to obtain the average release voltage and release current. Generally, the release voltage of the relay is about 10 ~ of the transfer voltage ~ 50%. If the release voltage is too small (less than 1/10 of the transfer voltage), it cannot be used normally. This will pose a threat to the stability of the circuit and work is not feasible *.
Iv. Electrical Symbols and contact forms of Relays
The relay coil is represented by a long box symbol in the circuit. If the relay has two coils, draw two parallel long boxes. At the same time, the text symbol "J" of the relay is marked in the long box or beside the long box ". There are two ways to express the contacts of relays: one is to draw them directly on one side of the rectangular frame, which is more intuitive. The other is to draw each contact to its own control circuit according to the needs of circuit connection. The same text symbol is usually marked on the contacts of the same relay and next to the coil respectively, and the contact group number to show the difference. There are three basic forms of relays:
1. When the dynamic (h) coil is not powered on, the two contacts are disconnected. After the coil is powered on, the two contacts are closed. It is represented by H in the heap pinyin font.
2. When the dynamic breaking type (type D) coil is not energized, the two contacts are closed. After the coil is energized, the two contacts are disconnected. It is represented by the broken pinyin character "D.
3. The conversion type (Z type) is the contact group type. There are three contacts in this contact group, that is, the center is a dynamic contact, and each of them has a static contact. When the coil is not powered on, the dynamic contact and one of the static contact are closed and the other is closed. After the coil is powered on, the dynamic contact moves, closing the original closed and breaking the original closed, to achieve the purpose of conversion. Such a contact group is called a conversion contact. It is represented by "Z", the pinyin character header of "Conversion.
V. Selection of Relays
1. first understand the necessary conditions: ① control the power supply voltage of the circuit, the maximum current that can be provided; ② the voltage and current in the controlled circuit; ③ control circuit requires several groups, what form of contacts. When selecting relays, the power supply voltage of the general control circuit can be used as the basis for selection. The control circuit should provide sufficient working current to the relay; otherwise, the relay is unstable.
2. After checking the relevant information to determine the conditions for use, you can find the relevant information and find out the type and specification number of the required relay. If a relay already exists, check whether it can be used based on the data. Finally, consider whether the size is appropriate.
3. Pay attention to the volume of the appliance. If it is used for general electrical appliances, in addition to the capacity of the chassis, the small relays mainly consider the layout of circuit board installation. For small-sized electrical appliances, such as toys and remote control devices, super-small relay products should be used.