Semiconductor random Memory

1, basic structure

Storage matrix decoding drive circuit, reading and writing circuit, and its basic structure

→| Translation and Reading

Address Line →| code storage matrix write → data line

→| Drive Power

→| Moving Road

Figure 1 Basic structure of semiconductor memory chip

The storage matrix consists of a large number of bit storage units

Decoding drive: Translates the address signal from the address bus into the corresponding memory cell's selection signal, which completes the read and write operation to the selected unit under the cooperation of the reading and writing circuit.

Read-write circuit: Includes readout amplifier and write circuit, which can be used to complete read and write operation.

Read and write control line: Determine the chip to read and write operations

Slice selection: Decide which storage is selected

Address line: is a one-way input, the number of bits and the number of stored words related

Data line: Is bidirectional input, and its number of bits is related to the number of data bits read and written. The number of data lines and the number of address lines together reflect the size of the memory chip capacity. If the address line 10, the data line 8, then the capacity of the chip is =8k bit

The semiconductor random access memory can be divided into two kinds of static RAM and dynamic RAM according to the principle of storing information, and the buffer memory is mostly implemented by static RAM, while the latter is widely used in main memory of computer.

74138 Decoder:

Decoding is the inverse of the coding process, the realization of the decoder circuit is called a decoder.

Semiconductor random Memory