The movement of the transistor internal carrier, the characteristic curve of the input and output

Input characteristic curve

When uce=0v is equivalent to a short circuit of the collector and emitter, the input characteristic curve is similar to the PN junction volt-ampere characteristic curve.

When the UCE increases, the curve shifts to the right. This is because the non-equilibrium small sub-region injected into the base area of the emitter region over the base region and the collector Junction to form a collector current IC, so that in the base region involved in the composite motion of the non-balanced small sub-smaller with the increase of the UCE, so to obtain the same IB must increase ube, the launch area to inject more electrons However, the collector's ability to collect electrons is limited.

Output characteristic curve

for each identified IB there is a curve, and the output curve is a family curve. For a curve, when the UCE gradually increases from 0. With the increase of the electric field, the ability of collecting the non-equilibrium small sub-region is gradually enhanced, thus the IC is bigger. When the UCE increases to a certain extent, the gathering power of the electric field to collect the most of the non-equilibrium small sub-region of the base area, the UCE increases, the collection capacity can not be significantly improved.

Cutoff area: The transmit junction voltage is less than the open voltage, and the set-junction reverse bias

Amplification area: The transmit junction is positive, and the set electric junction is reversed.

Saturation Zone: The transmit junction is positive, and the collector junction is biased.

The movement of the transistor internal carrier, the characteristic curve of the input and output