Bidirectional level conversion circuit of MOS-N FET -- simple application of low frequency signal level conversion
As shown in, it is a bidirectional level conversion circuit of the MOS-N Fet.
Bidirectional transmission principle:
For convenience, we define 3.3 V as a side and 5.0 V as B side.
The a-end output is low (0 V), the MOs are on, and the B-end output is low (0 V)
End a outputs high power (3.3 V). End B Outputs are high (5 V)
When the side outputs high impedance (OC), The MOs end, and the B side outputs high (5 V)
The B-end output is low (0 V) at ordinary times, and the diode in the mos tube is turned on, so that the mos tube is turned on. The A-end output is low (0 V)
End B Outputs high power (5 V). End a outputs are high (3.3 V)
When the high-impedance (OC) is output at the B end, the output at the end is high (3.3 V)
Advantages:
1. It is suitable for low-frequency signal level conversion at a low price.
2. After conduction, the pressure drop is smaller than that of the transistor.
3. Positive and reverse bidirectional conduction, equivalent to mechanical switch.
4. Voltage Drive, of course, also requires a certain amount of drive current, and some applications may be larger than the transistor.
Two-way low-frequency switch circuit of n reinforced MOS Tube