Differences between SRAM and SDRAM

SDRAM synchronizes Dynamic Random Access Memory. Synchronization refers to the step clock required for memory operations. Internal Command sending and data transmission are based on it; dynamic means that the storage array needs to be constantly refreshed to ensure that data is not lost. Random means that the index data is not stored in a linear order, but is read and written by the specified address.
SRAM is short for static RAM. It is a type of memory with static access function. It can store internal storage data without refresh the circuit. Unlike DRAM memory, the refresh circuit is required. It is fixed to charge DRAM refresh once every other time. Otherwise, internal data will disappear, so SRAM has high performance, however, SRAM also has its disadvantages, that is, its low integration level. DRAM memory with the same capacity can be designed as a small volume, but it needs a large volume.
SRAM uses a bistability trigger to remember information, while SDRAM uses the gate capacitor in the mos circuit to remember information. Because the charge on the capacitor will leak and needs to be supplemented regularly, dynamic RAM needs to set a refresh circuit. However, compared with static RAM, dynamic RAM features high integration, low power consumption, and low cost. It is suitable for large-capacity storage. Therefore, the main memory usually uses SDRAM, while the high-speed buffer memory (cache) uses SRAM. In terms of access speed, SRAM> SDRAM. In addition, the memory is also used in graphics cards, sound cards, CMOS and other devices, used to act as the device cache or save fixedProgramAnd data.