Dinor flash knowledge

Flash memory is a kind of non-volatile memory (NVM) that maintains on-chip information even after power supply is off, while non-volatile memory, such as DRAM and SRAM, when the power supply is off, the information in the chip is lost. Flash Memory sets other types of non-volatile memory features: Compared with EPROM, flash memory has obvious advantages-in System power erasable and repeatable programming without special High Voltage(Some first-generation flash memory also requires high voltage to complete erasure and/or programming operations); compared with EEPROM, flash memory features low cost and high density. Dinor (divided bit-line nor) is a patented technology developed by Mitsubishi and Hitachi. To some extent, it improves the Writing Performance of nor.. The flash memory technology of Dinor has the same fast and random reading function as the nor technology. The random programming speed by byte is slightly lower than that of nor, and the block erasure speed is faster than that of nor. This is because when the nor technology flash memory is programmed, the charge inside the storage unit moves to the floating gate of the transistor array, and the charge gathers, so that the potential changes from 1 to 0; When erased, remove the collected charge from the floating gate to change the potential from 0 to 1. While the charge movement direction of the Dinor flash memory in programming and erasure operations is opposite to that of the former. Dinor flash memory does not require page pre-programming when performing the erasure operation, and the voltage required for programming operations is lower than the voltage required for the erasure operation, which is opposite to nor technology. The Dinor device, m5m29gb/t320, introduced by Mitsubishi, uses the patented BGO Technology of Mitsubishi and Hitachi to divide flash memory into four storage zones, you can perform read operations on one of the other three buckets while programming or erasing any of the buckets, you can use hardware to program and erase read operations without external EEPROM. Because there are multiple access channels, the system speed is improved. The chip uses a 0.25 μm manufacturing process, which not only achieves fast reading speed of 80 ns, but also has advanced power-saving performance. In the standby and automatic power-saving modes, the power consumption is only 0.33 μs. When any address line or chip enabling signal remains unchanged for NS, the automatic power-saving mode is enabled. Applications with strict power consumption restrictions and fast reading requirements, such as digital cellular phones, vehicle navigation and global positioning systems, handheld computers and pin boxes, portable computers, personal digital assistants, wireless communications, and other fields.