Enhanced n-Channel MOS tube (e.g. si2300) switching conditions

Enhanced-N Channel MOS tube (e.g. si2300) switching conditions
An enhanced n-Channel MOS Tube's s (source source) and D (drain drain) conduction conditions depend on the VGS, the voltage dropout between the gate and the source. only if vgs > 2.5V, which is vg (G-pole voltage)- vs (S-pole voltage) > 2.5v,d and S-poles conduction. For example:
G extremely 3.3V, s extremely 0.1V, vgs = 3.3-0.1 = 3.2V > 2.5V, so D-pole and S-pole conduction, D-Pole voltage Vd = 0.1V
In actual use, the G pole is generally connected to the power supply positive VCC, s pole generally connected to the negative GND, because the MoS tube conduction impedance is very small, for the European level, so the voltage drop between the S-pole and D-pole is very small. Here is an application of this feature to prevent the protection of the power supply anti-circuit, so the application is much better than the use of diodes, because the diode will have about 0.7V pressure drop. The circuit is as follows:



Vin is the power input and VDD is the power output.