DDR parameter Memory delay timing "Cl-trcd-trp-tras"

Speed Grade (DATARATE/CL-TRCD-TRP)
-1066 Mbps/7-7-7
-Mbps/5-5-5

datarate Data rate 800,1066,1333,1600, even 2000MHz

CL-TRCD-TRP Timing

1.CL(CAS Latency): "Latent time of memory read-write operations Forefront Address Controller" (Possible options: 1.5/2/2.5/3)
Other possible descriptions in the BIOS are: TCL, CAS Latency time, CAS Timing Delay. This parameter is important and is usually marked on the memory bar. The CAS parameter options for DDR memory in the BIOS setup are usually "1.5", "2", "2.5", "3", and SDRAM has only 2 and 3 options. A lower CAs cycle can reduce the latency of memory to improve memory productivity. So as long as we can run the operating system stably, we should try to reduce the CAS parameters. Conversely, if the memory is running unstable, you can set this parameter large to improve memory stability.

2.TRCD(Ras-to-cas delay) "line addressed to column addressing delay time" (Possible option: 2/3/4/5)
Possible other descriptions in the BIOS: TRCD, RAS to CAS Delay, Active to CMD, and so on. The smaller the value, the better the performance.

3.TRP(RAS precharge time): "Memory line address controller pre-charge" (Possible option: 2/3/4)
Possible additional description in BIOS: TRP, RAS Precharge, Precharge to active. The smaller the pre-charge parameter, the faster the memory reads and writes.

4.TRAS(RAS Active time): "The memory line is valid to the shortest period of pre-charging" (Possible options: 1 ... 5/6/7 ... 15)
Possible additional descriptions in BIOS: TRAS, active to precharge delay, row active time, Precharge Wait state, Row active Delay, row precharge delay, RAS Active time, etc.

DDR parameter Memory delay timing "Cl-trcd-trp-tras"