The company (CREE) recently announced the introduction of two new GAN processes

Branch Rui Company (CREE) announced the introduction of two new Gan technology: 0.25 micron, the highest leakage voltage of 40V g40v4 and 0.4 microns, the highest drain voltage of 50vg50v3. The new technology adds operating voltages and radio frequency power densities, and can achieve smaller bare chips and more compact and efficient amplifiers than conventional technologies. The two new technologies are compatible with the proven GAN monolithic microwave integrated circuit (MMIC) technology in the industry, and can be applied to a 100 mm diameter sic wafer with a full set of passive circuit elements and a non-linear model.

New technology has now been applied to research and development and mass production. Through these two newest technologies, Branch Rui is able to provide a number of OEM services including a full set and dedicated masks to facilitate the rapid development of custom circuits. The G40V4 process can be carried out under the conditions of RF power density 6w/mm of the 28V and 40V two operating voltages, and the field-effect transistor (FET) under 18GHz. The G50V3 process can be carried out in an environment where the RF power density 8w/mm at the outer rim of the field effect transistor (FET) with a working voltage of 50V and 6GHz. The two processes are all based on the G28v3 technology previously released by Ke Rui. Since 2006, 0.4 micron, working voltage of 28V G28V3 technology is the industry's lowest failure rate in the field of microwave technology (9 fault devices every 1 billion hours).

It is estimated that if GaN replaces conventional transistor technology in the installation of a typical three-part multi-band lte/4g Communication Remote Radio Head (RRH), it can reduce the RRH power consumption by up to 20%, thereby reducing operating costs and energy consumption. In addition, the new process can reduce the initial system cost. The high voltage and efficiency of the GAN process can help reduce the radiator and casing size, reduce the design complexity of the RF amplifier, and reduce the cost of AC to DC and DC to DC converters. In addition, air can now replace the previously required large fan to achieve system cooling. All of these improvements can save up to 10% of material costs and significantly reduce system acquisition costs.

Military radar systems also have the same advantages. The high efficiency of the branch Rui Gan process can reduce the working power consumption while reducing the maintenance cost, so it can optimize the system life cycle cost significantly. G40v4 and G50v3 process (channel) junction temperature is 225ºc, the average life of more than 2 million hours (228 years), its excellent reliability can significantly reduce the radar system in the working life of the maintenance and maintenance costs.

"Our customers need reliable and higher frequency processes to develop the advantages of GaN and apply to areas above 6GHz, including satellite communications, radar and EW markets," said Jim Milligan, director of the department's radio RF and microwave division. We believe that the new g40v4 The process can well meet the needs of customers. At the same time, in response to customer demand for Low-cost GaN Solutions, Branch Rui newly introduced a work voltage of 50V g50v3 technology, to achieve excellent wireless RF output power price, to accelerate the GAN in the communications infrastructure, such as the cost of extremely sensitive market areas, Gan It is now possible to provide a performance advantage unmatched by silicon LDMOS in these areas. ”

Ke Rui Power and radio frequency (RF) Vice president and general manager Cengiz Balkas said: "The new process of higher working voltage and more efficient is the key to rapid popularization." If GaN is used in the upcoming LTE/4G macro unit base station, communications operators can save more than $2 billion trillion in energy costs each year. Fortunately, the communications industry has begun to recognise these potential savings. Branch Rui plans to provide more than 75 million watts of GaN transistors for the communications base station this year. ”

Under the 40V working voltage and 18GHz conditions, the G40V4 technology can provide up to 6w/mm PSAT; under 10GHz conditions, typical device characteristics can achieve 65% power additional efficiency (PAE) and 12dB small signal gain. Under 50V operating voltage and 6GHz conditions, the G50V3 process can provide up to 8w/mm psat;3.5ghz conditions, the typical device characteristics can achieve 70% power additional efficiency (PAE) and 12dB small signal gain. The maximum working channel temperature of the two GaN processes is 225ºc, and the average life expectancy is greater than 2 million (2E6) hours. In addition, Branch Rui also released the Mmic Design Suite, which has the branch Rui patented scalable Non-linear HEMT model, suitable for Agilent's advanced System (ADS) and AWR Microwave Office simulation platform. The design kit also has a complete set of passive components including resistors, capacitors, helical inductors and base-plate holes, which can be used to simulate full mmic performance and significantly shorten the design cycle.